Gallium nitride

Results: 448



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4172 Technology focus: Nitride transistors  High-temperature recess for normally-on gallium nitride transistors Researchers claim the highest output power density and power-added efficiency

72 Technology focus: Nitride transistors High-temperature recess for normally-on gallium nitride transistors Researchers claim the highest output power density and power-added efficiency

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Source URL: www.semiconductor-today.com

Language: English - Date: 2016-02-26 03:30:55
    42HexaTech AlN-30 Datasheet, Rev B.indd

    HexaTech AlN-30 Datasheet, Rev B.indd

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    Source URL: www.hexatechinc.com

    Language: English - Date: 2015-01-28 08:00:08
    43HexaTech AlN-20 Datasheet, Rev B.indd

    HexaTech AlN-20 Datasheet, Rev B.indd

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    Source URL: www.hexatechinc.com

    Language: English - Date: 2015-01-28 08:00:08
    44HexaTech AlN-50 Datasheet, Rev B.indd

    HexaTech AlN-50 Datasheet, Rev B.indd

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    Source URL: www.hexatechinc.com

    Language: English - Date: 2015-01-28 08:00:08
    4580 Technology focus: LEDs  Long-wavelength N-polar indium gallium nitride LEDs MOVPE process achieves red emission with 633.4nm wavelength, longer than other –c-plane InGaN LEDs, according to researchers.

    80 Technology focus: LEDs Long-wavelength N-polar indium gallium nitride LEDs MOVPE process achieves red emission with 633.4nm wavelength, longer than other –c-plane InGaN LEDs, according to researchers.

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    Source URL: www.semiconductor-today.com

    Language: English - Date: 2015-09-01 10:46:08
      4682 Technology focus: Nitride materials  Indium surfactant for higher hole concentration in gallium nitride Ammonia-based MBE process suppresses compensating donor effects.

      82 Technology focus: Nitride materials Indium surfactant for higher hole concentration in gallium nitride Ammonia-based MBE process suppresses compensating donor effects.

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      Source URL: www.semiconductor-today.com

      Language: English - Date: 2015-09-01 10:46:01
        47RF/Microwave Die Attach of Gallium Nitride Devices Achieving Less Than 1% Voiding in a Flux-Free Environment Bruce Wilson SST International Downey, CA

        RF/Microwave Die Attach of Gallium Nitride Devices Achieving Less Than 1% Voiding in a Flux-Free Environment Bruce Wilson SST International Downey, CA

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        Source URL: www.calce.umd.edu

        Language: English - Date: 2014-02-21 10:33:51
          48Session Title:  [TuB3] 01: Power Semiconductor Devices and Packaging (1) Date:

          Session Title: [TuB3] 01: Power Semiconductor Devices and Packaging (1) Date:

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          Source URL: www.icpe2015.org

          Language: English - Date: 2015-05-22 13:46:38
          49     EUROPEAN ORGANIZATION FOR NUCLEAR RESEARCH Addendum to the ISOLDE and Neutron Time-of-Flight Committee

              EUROPEAN ORGANIZATION FOR NUCLEAR RESEARCH Addendum to the ISOLDE and Neutron Time-of-Flight Committee

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          Source URL: joao.web.cern.ch

          Language: English - Date: 2014-03-26 16:28:59
          50Gallium nitride / Chemistry / Gan Chinese / Gan language

          DOC Document

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          Source URL: www.business-anti-corruption.eu

          Language: English - Date: 2014-11-05 08:05:49